不同磨料对微晶玻璃化学机械抛光的影响:不同磨料对微晶玻璃化学机械抛光的影响
Effect of Different Abrasives on Chemical Mechanical Polishing of Glass-Ceramics
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作 者:王金普 白林山 储向峰
Wang Jinpu, Bai Linshan, Chu Xiangfeng ( School of Chemistry and Chemical Engineering, Anhui University of Technology, Maanshan 243002, China)
机构地区:安徽工业大学化学与化工学院,马鞍山243002
出 处:《纳米技术与精密工程》 EI CSCD 2015年第13卷第1期 74-79页,共6页
Nanotechnology and Precision Engineering
基 金:教育部高校留学回国人员科研资助项目;安徽工业大学创新团队资助项目(TD201204);国家自然科学基金资助项目(50975002).
摘 要:为了提高微晶玻璃化学机械抛光(CMP)的材料去除速率(MRR),降低其表面粗糙度,利用自制的抛光液对微晶玻璃进行化学机械抛光,研究了4种含不同磨料( SiO2、Al2 O3、Fe2 O3、CeO2)的抛光液对微晶玻璃化学机械抛光MRR和表面粗糙度的影响.利用纳米粒度仪检测抛光液中磨料的粒径分布和Zeta电位,利用原子力显微镜观察微晶玻璃抛光前后的表面形貌.实验结果表明,在相同条件下,采用CeO2作为磨料进行化学机械抛光时可以获得最好的表面质量,抛光后材料的表面粗糙度Ra=0.4 nm, MRR=100.4 nm/min.进一步研究了抛光液中不同质量分数的CeO2磨料对微晶玻璃化学机械抛光的影响,结果表明,当抛光液中CeO2质量分数为7%时,最高MRR达到185 nm/min,表面粗糙度Ra=1.9 nm;而当抛光液中CeO2质量分数为5%时, MRR=100.4 nm/min,表面粗糙度最低Ra=0.4 nm.CeO2磨料抛光后的微晶玻璃能获得较低表面粗糙度和较高MRR.
In order to increase the material removal rate ( MRR) and decrease the surface roughness of glass-ceramics in chemical mechanical polishing (CMP), experiments were conducted on glass-ceramic substrates by using home-made slurries , and the effect of different abrasives ( SiO2 , Al2 O3 , Fe2 O3 , CeO2 ) on the MRR and surface roughness of glass-ceramics in CMP was investigated .The size distribu-tion and Zeta potential of the different abrasive particles were characterized by Mastersizer .The surface roughness of the glass-ceramic substrates before and after being polished by different abrasives was meas-ured by atomic force microscope ( AFM ) .Results show that under the same conditions , the surface roughness Ra of the glass-ceramic substrate is 0.4 nm and the MRR is 100.4 nm/min when CeO2 was abrasive in the slurry .Then the effect of CeO 2 mass fraction on CMP of glass-ceramics was studied .It was found that when the mass fraction of CeO2 is 7%, the MRR of glass-ceramic substrate is 185 nm/min and the surface roughness Ra is 1.9 nm;while when the mass fraction of CeO 2 is 5%, the MRR of glass-ceramic substrate is 100.4 nm/min and the surface roughness Ra is 0.4 nm.Lower surface roughness and higher MRR can be obtained after being polished by CeO 2 slurry .
关键词:微晶玻璃 化学机械抛光 材料去除速率 表面粗糙度 磨料
glass-ceramics ;chemical mechanical polishing ;material removal rate ;surface roughness ;abrasive ;